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IRVINE, Calif., June 18 /PRNewswire/ -- Strengthening its position as a leading supplier of static random access memory (SRAM) devices, Toshiba America Electronic Components, Inc. (TAEC)* with its parent company Toshiba Corporation (Toshiba), today introduced its 32-megabit (Mb) Pseudo-SRAM device.

Toshiba's 32Mb Pseudo SRAM device offers designers of wireless and portable communications devices a significantly higher density SRAM solution than currently available. The Pseudo-SRAM's standard SRAM interface and 1-transistor DRAM-like memory cell make it an easy design-in for cellular phone and PDA applications, while providing a much lower cost than a traditional SRAM cell would at this density.

``In response to the explosive demand for full-featured cellular phones and PDAs, Toshiba developed a 32Mb Pseudo-SRAM solution, which offers twice the density than traditional SRAM solutions, while significantly reducing the cost per bit for emerging wireless devices,'' said Paul Liu, business development manager, SRAM products at TAEC. ``As a worldwide leader in the development of memory devices, we have aligned our low-power SRAM products to meet the needs of the wireless and portable markets and will continue to offer high performance, low cost, space saving solutions.''

Demand for small, high-density, low-power SRAM solutions has increased in order to accommodate the latest cellular phone and PDA features including Internet access, video and music transmission. According to Semico Research, Phoenix, Ariz., the communications segment made up $3.0 billion, or 47.8 percent, of the SRAM market in 2000, and that is expected to grow to 60.1 percent of the market by 2005. ``Toshiba's new, high density Pseudo-SRAM solution enables the company to better serve the growing communications market, particularly in next-generation wireless and portable devices including cellular phones and personal digital assistants,'' said Adrienne Downey, research analyst, Semico Research.

Toshiba's new 32Mb Pseudo-SRAM, designated TC51W3216XB, offers a higher density than traditional low-power SRAM solutions at 8Mb and 16Mb. Until now, for applications requiring at least 4 megabytes (MB) of SRAM memory, designers had to design-in a multi-chip memory solution to meet those requirements. With the high density of Toshiba's Pseudo-SRAM a single-chip SRAM memory solution is possible. In addition, the 48 ball fine pitch ball grid array (FBGA) packaging further reduces the requirements for board space as compared to traditional SRAM or DRAM devices housed in thin-small-outline (TSOP) packaging.

In addition, to meet the high-density memory requirements in wireless and portable communications devices, designers have traditionally relied on DRAM solutions. Unlike standard DRAM solutions, Toshiba's 32Mb Pseudo-SRAM does not require a separate DRAM controller, thus enabling smaller packaging and saving valuable board space. Its SRAM-like interface and self-refresh feature make the Pseudo-SRAM easy to design-in. Glue-logic, which is typically needed for the refresh operations with standard DRAM is not required for Pseudo-SRAM.

Toshiba's 32Mb Pseudo SRAM operates using a single power supply voltage range of 2.5 volts (V) to 3.1V. Its standby current is 70 microamperes (uA) with a deep power down standby mode of 5uA. The device also operates in a page mode with a page read operation of four words. It is logic compatible with SRAM write enable input.

     Technical Specifications
     Part Number            TC51W3216XB
     Configuration          2Mb x 16
     Design Rule            0.175 micron (um)
     Operating Voltage      2.5V - 3.1V
     Access Time            80 nanoseconds (ns)
     Package                48 ball FBGA

Pricing and Availability

Toshiba's 32Mb Pseudo-SRAM will be available in sample quantities in early third quarter 2001, priced at $26 each, with full production to follow within approximately two months of sampling. The company has plans to develop higher density Pseudo-SRAM solutions including 64Mb.